Document Details

Document Type : Article In Journal 
Document Title :
Simple and efficient Monte Carlo simulation of high-temperature hole transport in silicon and diamon
Simple and efficient Monte Carlo simulation of high-temperature hole transport in silicon and diamon
 
Document Language : Arabic 
Abstract : The Monte Carlo method is used to simulate the hole transport in silicon and diamond. A simple model based on one nonparabolic band (the heavy hole band) without iteration has been used. The temperature dependence of the density-of-states effective mass (accounting for nonparabolicity) has been taken into account in calculating the scattering rates. Carrier dynamics have been calculated using the density-of-states effective mass at room temperature, which does not vary considerably from its value at high temperature. The resulting model gives reasonable accuracy above room temperature. (C) 2001 Elsevier Science Ltd. All rights reserved. 
Journal Name : MICROELECTRONICS JOURNAL 
Volume : 32 
Issue Number : 4 
Publishing Year : 2001 AH  
Added Date : Tuesday, June 24, 2008 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
Gamal SHGamal SHResearcher  
طلال صدقة الحربيAl-Harbi TSResearcher dr-tharbi@hotmail.com

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