Document Details Document Type : Article In Journal  Document Title : Thermoelectric power (TEP) of layered chalcogenides GaTe crystals Thermoelectric power (TEP) of layered chalcogenides GaTe crystals   Subject : Physics  Document Language : English  Abstract : TEP measurements of gallium mono-tellurite single crystals have been studied over the temperature range 193-583 K. GaTe single crystals grown from melt by the modified Bridgman technique method. The results of measurements indicate that the investigated samples turned out to be P-type nature. Investigation of GaTe compound revealed that it has interesting properties. Many physical parameters were determined such as carrier mobilities, effective masses of free charge carriers, diffusion coefficient and diffusion length as well as the relaxation time. The highest value of figure of merit for GaTe permit the practical application as thermoelectric element. © 2008 Springer Science+Business Media, LLC.  ISSN : 1388-6150  Journal Name : Journal of Thermal Analysis and Calorimetry, Volume 94, Issue 2, November 2008, Pages 597-600  Volume : 94  Issue Number : 2  Publishing Year : 2008 AH 2008 AD  Number Of Pages : 4  Article Type : Article  Added Date : Thursday, October 15, 2009  Researchers Researcher Name (Arabic) Researcher Name (English) Researcher Type Dr Grade Email احمد عبدالله سالم آل موسى الغامدي Al-Ghamdi, A.A Researcher Doctorate AGAMDI@kau.edu.sa Back To Researches Page