Document Details

Document Type : Article In Journal 
Document Title :
A study of field dependent steady-state photocarrier grating measurements for microcrystalline semiconductors using different theoretical methods
A study of field dependent steady-state photocarrier grating measurements for microcrystalline semiconductors using different theoretical methods
 
Subject : Physics 
Document Language : English 
Abstract : The study of field dependent steady-state photocarrier grating (SSPG) measurements has been performed on microcrystalline samples prepared by hot-wire chemical vapor deposition (HWCVD) technique. The field-dependent experimental data at room temperature are analyzed using different approaches based on the small-signal photocurrent to extract more information on the electronic properties (like drift mobility for electrons and holes, small signal mobility life time product, average drift length for holes and electrons,... etc.). The quality of the fits has been tested by χ2 indicator and the best choice of the transport parameters has been extracted due to each adopted approach. The trapped charge density can be correlated to minority-carrier mobility-lifetime product or diffusion length which is, in turn, may be related to sub-gap absorption. 
ISSN : 1454-4164 
Journal Name : Journal of Optoelectronics and Advanced Materials, Volume 10, Issue 1, January 2008, Pages 174-184 
Volume : 10 
Issue Number : 1 
Publishing Year : 2008 AH
2008 AD 
Number Of Pages : 11 
Article Type : Article 
Added Date : Thursday, October 15, 2009 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
رشاد ابراهيم بدوي بدرانRashad Ibrahim BadranResearcherDoctoraterbadran@hau.edu.sa

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