Document Details

Document Type : Article In Journal 
Document Title :
Series resistance controlling photosensor of Ag/DNA/p-Si/Al diode
Series resistance controlling photosensor of Ag/DNA/p-Si/Al diode
 
Subject : physics 
Document Language : English 
Abstract : The Ag/DNA/p-Si/Al Schottky barrier diode was fabricated using spin-coating technique. The electrical characterization of the diode was performed using current-voltage and capacitance-voltage-frequency measurements. The ideality factor and barrier height of the diode were found to be 2.26 and 0.72 eV, respectively. The photoresponse measurements indicate that the diode behaves as a photodiode. The alternative current (AC) measurements were performed in detail. The capacitance-voltage-frequency (C-V-f) measurements indicate that the capacitance of the diode depends on voltage and frequency. The observed decrease in the capacitance and increase in the conductance with increase in frequency were explained on the basis of interface states. The density of interface states of the diode is decreased with increasing frequency. It was observed that the series resistance of the diode is decreased with increasing light intensity and increased with decreasing frequency under constant light intensity. 
ISSN : 0379-6779 
Journal Name : SYNTHETIC METALS 
Volume : 162 
Issue Number : 11-12 
Publishing Year : 1433 AH
2012 AD
 
Article Type : Article 
Added Date : Tuesday, July 25, 2017 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
R.K GuptaGupta, R.K InvestigatorDoctorateramguptamsu@gmail.com
A.A Al-Ghamdi,Al-Ghamdi, A.A ResearcherDoctorate 
Omar A Al-HartomyAl-Hartomy, Omar A ResearcherDoctorate 
H Hasar,Hasar,, H ResearcherDoctorate 
Farid El-TantawyEl-Tantawy, Farid ResearcherDoctorate 
F YakuphanogluYakuphanoglu, F ResearcherDoctorate 

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