Document Details

Document Type : Article In Journal 
Document Title :
DNA Biosensor Based Interface States of a Metal-Insulator- Semiconductor Diode for Biotechnology Applications
DNA Biosensor Based Interface States of a Metal-Insulator- Semiconductor Diode for Biotechnology Applications
 
Subject : physics 
Document Language : English 
Abstract : We studied how a DNA sensor based on the interface states of a conventional metal-insulatorsemiconductor diode can be prepared for biotechnology applications. For this purpose, the p-type silicon/metal diodes were prepared using SiO2 and DNA layers. The obtained results were analyzed and compared with interfaces of DNA and SiO2. It is seen that the ideality factor (1.82) of the Al/p- Si/SiO2/DNA/Ag diode is lower than that (3.31) of the Al/p-Si/SiO2/Ag diode. This indicates that the electronic performance of DNA/Si junction was better than that of SiO2/Si junction. The interface states of the Al/p-Si/SiO2/DNA/Ag and Al/p-Si/SiO2/Ag junctions were analyzed by conductance technique. The obtained D-it values indicate that the DNA layer is an effective parameter to control the interface states of the conventional Si based on metal/semiconductor contacts. Results exhibited that DNA based metal-insulator-semiconductor diode could be used as DNA sensor for biotechnology applications 
ISSN : 0587-4246 
Journal Name : ACTA PHYSICA POLONICA A 
Volume : 121 
Issue Number : 3 
Publishing Year : 1433 AH
2012 AD 
Article Type : Article 
Added Date : Tuesday, July 25, 2017 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
A.A Al-Ghamdi,Al-Ghamdi, A.A InvestigatorDoctorate 
Omar A Al-HartomyAl-Hartomy, Omar A ResearcherDoctorate 
R Gupta,Gupta,, R ResearcherDoctorate 
F El-TantawyEl-Tantawy, F ResearcherDoctorate 
E. TaskanTaskan, e ResearcherDoctorate 
H HasarHasar,, H ResearcherDoctorate 
F YakuphanogluYakuphanoglu, F ResearcherDoctorateyhanoglu@firat.edu.tr

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