Document Details Document Type : Article In Conference  Document Title : The Effect of P-Doping in InP/AlGaInP Quantum Dot Lasers The Effect of P-Doping in InP/AlGaInP Quantum Dot Lasers   Subject : physics  Document Language : English  Abstract : We measure optical gain and absorption spectra for structures with different p-doping level. Results show an increase in maximum modal gain at fixed quasi-Fermi level separation and high defect number in the high p-doped structure.  Conference Name : 23rd IEEE International Semiconductor Laser Conference (ISLC)  Duration : From : 10-7-2012 AH - To : 10-10-2012 AH From : 10-7 AD - To : 10-10 AD  Publishing Year : 1433 AH 2012 AD  Number Of Pages : 5  Article Type : Article  Conference Place : San Diego, CA  Organizing Body : IEEE  Added Date : Tuesday, July 25, 2017  Researchers Researcher Name (Arabic) Researcher Name (English) Researcher Type Dr Grade Email M.S Al-Ghamdi, Al-Ghamdi, M.S Investigator Doctorate msalghamdi@kau.edu.sa P.M Smowton Smowton, P.M Researcher Doctorate   A.B Krysa Krysa, A.B Researcher Doctorate   Files File Name Type Description  42264.pdf pdf   Back To Researches Page