Document Details

Document Type : Article In Journal 
Document Title :
Photoelectrical characterization of a new generation diode having GaFeO3 interlayer
Photoelectrical characterization of a new generation diode having GaFeO3 interlayer
 
Subject : physics 
Document Language : English 
Abstract : In this work, we have systematically investigated the effects of illumination intensity on the electrical characteristics of GaFeO3/p-Si heterostructure. The current-voltage (I-V) measurements of the heterostructure based on GaFeO3 thin film were performed in dark and under different illumination intensities. The photocurrent in the reverse biased I-V measurement is strongly sensitive to photoillumination. The ideality factor (n) and zero-bias barrier height (phi(bo)) were found to be strongly illumination dependent and while ON decreases, n increases with decreasing illumination. From capacitance-voltage (C-V) characteristics, it has been seen that the capacitance decreases as the frequency increases, exhibiting a continuous distribution of the interface states at frequency range 10 kHz to 1 MHz. The interface state density was determined by conductance method for dark conditions. It is believed that the combination of p-Si and thin GaFeO3 layer will provide new opportunities as a photodiode sensor for visible light sensor applications 
ISSN : 0927-0248 
Journal Name : SOLAR ENERGY MATERIALS AND SOLAR CELLS 
Volume : 124 
Issue Number : 1 
Publishing Year : 1435 AH
2014 AD 
Article Type : Article 
Added Date : Wednesday, August 2, 2017 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
Murat SoyluSoylu, Murat InvestigatorDoctoratefizik.07@hotmail.com
M CavasCavas, M ResearcherDoctorate 
A.A Al-Ghamdi,Al-Ghamdi, A.A ResearcherDoctorate 
Z.H GaferGafer, Z.H ResearcherDoctorate 
F El-TantawyEl-Tantawy, F ResearcherDoctorate 
F YakuphanogluYakuphanoglu, F ResearcherDoctorate 

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