Document Details

Document Type : Article In Journal 
Document Title :
Improvement of photoresponse properties of NiO/p-Si photodiodes by copper dopant
Improvement of photoresponse properties of NiO/p-Si photodiodes by copper dopant
 
Subject : physics 
Document Language : English 
Abstract : Sol-gel spin coating technique was used to fabricate undoped and Cu doped NiO films. The effects of Cu doping on the optical properties of NiO films were investigated. The optical band gap value of the NiO films was decreased with increase in Cu doping level. The band gap values for 0.1 at%, 0.2 at%, 1.0 at%, and 2.0 at% Cu doped NiO films were 3.74 eV, 3.69 eV, 3.68 eV, and 3.67 eV, respectively. The junction and photoconducting properties of the Al/Cu-NiO/p-Si/Al device were studied that I-on/I-off value of the Al/Cu-NiO/p-Si/Al device firstly increases with increase in Cu doping level up to 0.2% of Cu and then decreases with further increase in the Cu doping level. The transient photocurrent measurement indicated that photocurrent under illumination was higher than the dark current and transient photocurrent increases with increase in light intensity. The C-V characteristics of the diode were also investigated at different frequencies. The observed behavior of the diodes was explained on the basis of the interface states 
ISSN : 1386-9477 
Journal Name : PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 
Volume : 56 
Issue Number : 1 
Publishing Year : 1435 AH
2014 AD 
Article Type : Article 
Added Date : Thursday, August 3, 2017 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
R.K Gupta,Gupta,, R.K InvestigatorDoctorate 
A.A HendiHendi, A.A ResearcherDoctorate 
M CavasCavas, M ResearcherDoctorate 
A.A Al-Ghamdi,Al-Ghamdi, A.A ResearcherDoctorate 
Omar A Al-HartomyAl-Hartomy, Omar A ResearcherDoctorate 
R. H. Alorainy,Alorainy,, R. H. ResearcherDoctorate 
F El-TantawyEl-Tantawy, F ResearcherDoctorate 
E. YakuphanogluYakuphanoglu, E. ResearcherDoctoratefyhanoglu@firat.edu.tr

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