Document Details

Document Type : Article In Journal 
Document Title :
Thermally activated conductivity of Si hybrid structure based on ZnPc thin film
Thermally activated conductivity of Si hybrid structure based on ZnPc thin film
 
Subject : physics 
Document Language : English 
Abstract : In this study, an analysis of temperature-dependent electrical characteristics of ZnPc/p-Si structure has been presented. Conduction mechanisms that are accounted for the organic/inorganic devices are evaluated. At low forward voltage, current-voltage (I-V) characteristics show ohmic behavior, limiting extraction of holes from p-Si over the ZnPc/p-Si heterojunction. Thermally activated conduction mechanism appears to be space-charge-limited conduction mechanism, taking into account the presence of an exponential trap distribution with total concentration of traps, N-t of 5.77 x 10(25) m(-3). The series resistance is found to be temperature dependent. There is a critical point on the regime of series resistance at 200 K. The capacitance varies with temperature at different rates below and above room temperature, indicating a variation in the dielectric constant. 
ISSN : 0947-8396 
Journal Name : APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 
Volume : 122 
Issue Number : 10 
Publishing Year : 1437 AH
2016 AD 
Article Type : Article 
Added Date : Tuesday, August 8, 2017 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
M SoyluSoylu, m InvestigatorDoctoratesoylum74@yahoo.com
A.A Al-Ghamdi,Al-Ghamdi, A.A ResearcherDoctorate 
F YakuphanogluYakuphanoglu, F ResearcherDoctorate 

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