Document Details

Document Type : Article In Journal 
Document Title :
Electrical and Photoresponse Properties of CuFe1-xSnxO2/p- Si Photodiode
Electrical and Photoresponse Properties of CuFe1-xSnxO2/p- Si Photodiode
 
Subject : physics 
Document Language : English 
Abstract : The electrical and photoresponse properties of Al/CuFe1-xSnxO2 (x = 0.03)/p-Si/Al diode were investigated using current voltage (I-V) and capacitance/conductance voltage measurements. The diodes exhibited a rectifying value with obtained electronic parameters. The barrier height value of the diode is increased with increasing temperature, while the ideality factor is decreased. The change in electronic parameters of the diode is explained on the basis of Schottky barrier height inhomogeneities at the interface. The value of C decreases with increasing frequency. The decrease was explained on the basis of interface states. The photoresponse properties of the diode was investigated under solar light and the diode exhibited a photodiode behavior at room temperature. 
ISSN : 1555-1318 
Journal Name : JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS 
Volume : 11 
Issue Number : 3 
Publishing Year : 1437 AH
2016 AD 
Article Type : Article 
Added Date : Thursday, August 10, 2017 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
F.E Al-HazmiAl-Hazmi, F.E InvestigatorDoctorateialhazmi@kau.edu.sa

Files

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 42574.pdf pdf 

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