Document Details Document Type : Article In Journal  Document Title : Optical and electrical performance of Yb/InSe interface Optical and electrical performance of Yb/InSe interface   Subject : physics  Document Language : English  Abstract : In this study a 300 nm ytterbium transparent thin film is used as substrate to a 300 nm thick InSe thin film. The optical transmittance, reflectance and absorbance of the glass/InSe and Yb/InSe films are measured and analyzed. The optical data allowed determining the effects of the Yb layer on the energy band gap, on the dielectric and on optical conductivity spectra. The band gap of the InSe films shrunk from 2.38/139 to 1.90/1.12 eV upon Yb layer interfacing leading to a band offset of 0.48/0.27 eV. On the other hand, the modeling of the optical conductivity in accordance with the Lorentz theory revealed a free carrier scattering time, carrier density and mobility of 0.225 (fs), 3.0 x 10(19)(cm(-3)) and 2.53 cm(2)/Vs for the Yb/InSe interface, respectively. As these values seem to be promising for employing the Yb/InSe interface in thin film transistor technology, the current voltage characteristics of Yb/InSe/C Schottky diode were recorded and analyzed. The electrical analysis revealed the removal of the tunneling channels by using Yb in place of Al. In addition, the "on/off' current ratios, the Schottky barrier height and the switching voltage of the Yb/InSe/C device are found to be 18.8, 0.76/0.60 eV and 0.53 V, respectively.  ISSN : 1369-8001  Journal Name : MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING  Volume : 43  Issue Number : 1  Publishing Year : 1437 AH 2016 AD  Article Type : Article  Added Date : Monday, August 14, 2017  Researchers Researcher Name (Arabic) Researcher Name (English) Researcher Type Dr Grade Email S.R Alharbi Alharbi, S.R Investigator Doctorate   A.F Qasrawi Qasrawi, A.F Researcher Doctorate atef.qasrawi@atilim.edu.tr Files File Name Type Description  42609.pdf pdf   Back To Researches Page